Selective Chemical Vapour Deposition of Tungsten Using SiH4/WF6 Chemistry
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Gas/surface reactions in the chemical vapor deposition of tungsten using WF6/SiH4 mixturesJournal of Vacuum Science & Technology A, 1989
- Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer systemJournal of Vacuum Science & Technology B, 1988
- Properties of selective low pressure chemically vapor deposited tungsten films produced by hydrogen reduction in a cold wall systemThin Solid Films, 1988