Area-changed capacitive accelerometer using 3-mask fabrication process
- 2 April 2004
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 482-488
- https://doi.org/10.1117/12.523631
Abstract
This paper presents an area-changed capacitive accelerometer using a 3-mask fabrication process. The accelerometer is designed as finger structures connected in parallel that have a differential capacitor arrangement. The movable electrodes are mounted on a proof mass of silicon and a pair of stationary electrodes of polysilicon is formed under the mass with a 3 μm air gap. The fabrication process utilizes silicon/glass anodic bonding and deep reactive ion etching (DRIE) for high aspect ratio etching. The simulated mass displacement change rate is 0.076 μm/g and the overall sensitivity is -0.04/μm. This type of accelerometer will be characterized for low-g as well as for medium-g applications.Keywords
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