Microwave GaAs FET monolithic circuits
- 1 January 1979
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Performance of semi-insulating GaAs as a microwave substrate using different transmission line types will be covered. Measurements indicate that attenuation is low enough (≃ 0.5dB/cm at 12GHz) to permit fabrication of monolithic amplifiers. Amplifiers with 4.5dB gain from 4-12GHz will also be discussed.Keywords
This publication has 3 references indexed in Scilit:
- M.I.S. and Schottky slow-wave coplanar striplines on GaAs substratesElectronics Letters, 1977
- Design, Measurement and Application of Lumped Elements up to J-BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Monolithic broadband GaAs f.e.t. amplifiersElectronics Letters, 1976