Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelectric PbZrxTi 1-xO3 (PZT) Films
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S)
- https://doi.org/10.1143/jjap.34.1061
Abstract
Partial switching in ferroelectric PbZr x Ti1- x O3 (PZT) thin films has been studied for adaptive-learning metal-ferroelectric-semiconductor field-effect transistor (MFSFET) applications. In particular, the effects of film quality on adaptive-learning processes in ferroelectric PZT thin films are discussed. Dimensionality factor n of the ferroelectric domain growth is estimated to be 1.3-1.4 for sol-gel grown PZT films and 2.0-2.1 for vacuum-evaporated materials. It is shown that this discrepancy results in the difference of the adaptive-learning processes. It is also demonstrated that the learning process in PZT films can gradually proceed by applying the short input pulses.Keywords
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