Tight-binding calculations of microscopic screening of ion-ion interaction and phonon dispersion in germanium
- 15 November 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (10) , 4727-4729
- https://doi.org/10.1103/physrevb.14.4727
Abstract
A set of extreme tight-binding states for the valence and conduction bands in germanium, consistent with its observable electronic dielectric properties, is used to calculate the effective ion-ion interaction and phonon dispersion relations in the material. The agreement with experimental dispersion curves is comparable with other elaborate calculations.Keywords
This publication has 15 references indexed in Scilit:
- Microscopic optical fields in diamond and germanium: Molecular-orbital approachPhysical Review B, 1974
- Microscopic theory of dielectric screening and lattice dynamics. II. Phonon spectra and effective chargesPhysical Review B, 1974
- Microscopic Theory of Dielectric Screening and Lattice Dynamics in the Wannier Representation. I. TheoryPhysical Review B, 1973
- Phonons in semiconductorsC R C Critical Reviews in Solid State Sciences, 1973
- Microscopic Theory of Force Constants in the Adiabatic ApproximationPhysical Review B, 1970
- Dielectric Screening Model for Lattice Vibrations of Diamond-Structure CrystalsPhysical Review B, 1969
- Nonlinear Optical Susceptibilities in Group-IV and III-V SemiconductorsPhysical Review B, 1968
- The electronic properties of tetrahedral intermetallic compounds I. Charge distributionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Quantum Theory of the Dielectric Constant in Real SolidsPhysical Review B, 1962
- On the Description of Covalent Bonds in Diamond Lattice Structures by a Simplified Tight-Binding ApproximationJournal of Applied Physics, 1962