High-speed frequency dividers using GaAs/GaAlAs high-electron-mobility transistors

1 March 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (5) , 217-219
https://doi.org/10.1049/el:19840144

Abstract

Very-high-speed divide-by-four circuits have been fabricated by using modulation-doped GaAs/GaAlAs high-electron-mobility transistors. The circuits consist of two T-connected D-flip-flops and are capable of operating at 3.6 GHz with a power dissipation of 0.46 mW per gate at room temperature, and at 5.2 GHz with a power dissipation of 0.78 mW per gate at 77 K. The speed-power products achieved are the lowest ever reported.

Keywords

FREQUENCY DIVIDERS
DIVIDE-BY-FOUR CIRCUITS
POWER DISSIPATION
FREQUENCY 3.6 GHZ
HEMT
FABRICATION
HIGH SPEED CIRCUITS
77K OPERATION
T-CONNECTED D-FLIP-FLOPS
SPEED-POWER PRODUCTS
PERFORMANCE
ROOM TEMPERATURE OPERATION
SEMICONDUCTOR
HIGH-ELECTROMOBILITY TRANSISTORS
MBE
GAAS/GAALAS
FIELD EFFECT IC
MODULATION DOPED STRUCTURES