Field Distribution and Current Saturation in Photoconductive CdS
- 1 December 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (13) , 5177-5182
- https://doi.org/10.1063/1.1709298
Abstract
The internal electric field distribution has been measured in photoconducting CdS single crystals using the linear electro‐optic effect. The experimental results show a nearly homogeneous field distribution in the crystals for applied fields below the threshold for acoustoelectric oscillations, while a high‐field region was created near the anode for fields above the threshold field. The reproducibility from sample to sample was rather poor. The linear electro‐optic constant was calculated from the experimental results: (r′113−r′333)=2.7×10−12 m/V at the optical wavelength 6328 Å.This publication has 14 references indexed in Scilit:
- Current Saturation and Trap-Controlled Electron Drift Mobility in Photoconductive CdSPhysical Review B, 1967
- Field distribution in semiconducting C dS under acoustic gain conditionsPhysics Letters, 1966
- Acoustoelectric Current Distribution and Current Saturation in CdSJournal of Applied Physics, 1966
- Current Saturation Associated with Ultrasonic Amplification in CdS CrystalsJournal of the Physics Society Japan, 1965
- The coupled modes of acoustic waves and drifting carriers in piezoelectric crystalsProceedings of the IEEE, 1964
- Current and Voltage Saturation in Semiconducting CdSPhysical Review Letters, 1964
- Ultrasonic Amplification and Non-Ohmic Behavior in CdS and ZnOJournal of Applied Physics, 1963
- Acousto-Electric Explanation of Non-Ohmic Behavior in Piezoelectric Semiconductors and BismuthPhysical Review Letters, 1962
- Amplification of Ultrasonic Waves in Piezoelectric SemiconductorsJournal of Applied Physics, 1962
- Current Saturation in Piezoelectric SemiconductorsPhysical Review Letters, 1962