Determination of Hot Electron Temperature in n-Type InSb
- 1 March 1969
- journal article
- research article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 26 (3) , 700-709
- https://doi.org/10.1143/jpsj.26.700
Abstract
Precise hot electron temperature T e was determined against electric field E for two n -InSb samples, of which exhaustion carrier concentration n 0 is 1×10 14 and 4×10 14 cm -3 respectively, provided that lattice temperature T L was at 4.2°K or below 2°K, and a transverse magnetic field B from 0 to 11.2 kG was applied. T e ( E ) was obtained by comparing resistivity and Hall coefficient at high E with those at ohmic E but at high T L . The results revealed (1) effects of various parameters ( B , n 0 , T L ) on T e ( E ), (2) a bend of T e at 18°K irrespective of B , n 0 and T L , (3) slow rise of T e above 18°K, resulting in T e ∞ E 2/7 if B =0, (4) termination of reasonable T e at 30°K and predominance of electron-electron scattering below 30°K. Inferences are given in terms of the two-band model.Keywords
This publication has 3 references indexed in Scilit:
- Non-Ohmic Properties in n-Type InSbJournal of the Physics Society Japan, 1967
- Evidence for absence of electrons from conduction band in N-InSb at low temperaturesSolid State Communications, 1967
- Shift of the magnetoresistance oscillation maxima due to an electric field in InSbSolid State Communications, 1966