Magnetopolaron in a semiconductor quantum well
- 15 November 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (15) , 7984-7993
- https://doi.org/10.1103/physrevb.36.7984
Abstract
Including bulk longitudinal-optical and surface-optical phonons as well as the influence of the image potential, the Hamiltonian of a magnetopolaron in a semiconductor quantum well is derived. The relations of its ground- and excited-state energies to the magnetic field and well width are studied.Keywords
This publication has 18 references indexed in Scilit:
- Effect of magnetic field on the energy levels of a hydrogenic impurity center in GaAs/As quantum-well structuresPhysical Review B, 1985
- Binding energy of the impurity level in the superlatticePhysical Review B, 1983
- Hydrogenic-impurity ground state inmultiple—quantum-well structuresPhysical Review B, 1983
- Polaron in a Thin SlabJournal of the Physics Society Japan, 1983
- Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Energy spectra of donors inquantum well structures in the effective-mass approximationPhysical Review B, 1982
- Hydrogenic impurity states in a quantum well: A simple modelPhysical Review B, 1981
- Dependence of the polaron binding energy and effective mass in a crystal layer on its thicknessSolid State Communications, 1981
- Polaron self-energy in a dielectric slabSolid State Communications, 1979
- Electron-phonon interaction in a dielectric slab: Effect of the electronic polarizabilityPhysical Review B, 1977