Charge-up prevention process for e-beam direct writing with multilayer resist

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Abstract
It is essential to avoid charging effects in E-beam direct writing for the fabrication of deep-sub-micron devices. It has been found that a spin-coated surfactant layer over the imaging resist can avoid charging effects. Application of this method to multilayer resist process is presented. With optimum surfactant layer thickness. there is no influence of surfactant layer on resist sensitivity or resolution. The surfactant layer can be removed easily in imaging resist development p r o c e In the case of tn-level resist with a 2.4pm overall thickness. registration error was reduced from I. 0 jim to 0. 1 um( isv. i +26) by adding a 0. l2,um-thick surfactant layer. Quarter micron patterns with good profiles were achieved using CMS-EX(R) as the imaging layer.

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