Tungsten films have been selectively deposited (i.e., deposited on Si and to the exclusion of ) by LPCVD via the reduction of by either Si or . Films formed by reduction can be unlimited in thickness; however, those formed by Si reduction are self‐limited in thickness to about 150Å. The effects of deposition parameters such as temperature and and flow rates on the properties of the W films have been investigated. To prevent excessive erosion of Si in window areas, the volumetric flow ratio of to must be larger than the critical value of about three. Typical films are polycrystalline with an average grain size of 2000Å and exhibit a tensile film stress of about . W film resistivity is found to be about 13 μΩ‐cm for a 1000Å film, resulting in a sheet resistance of 1.3 Ω/□. The W films exhibit good contact resistance to N+ and P+ Si, and are also found to be excellent diffusion barriers between Al and Si at annealing temperatures up to 450°C.