Jahn-Teller effect and asymptotic behavior of the recursion-method coefficients
- 15 June 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (18) , 10612-10618
- https://doi.org/10.1103/physrevb.37.10612
Abstract
In the study of the strongly coupled electron-phonon systems by the recursion procedure, we have examined the asymptotic behavior of the continued-fraction coefficients. Such a knowledge allows us to extend the continued-fraction coefficients and to calculate accurately the absorption band. Furthermore a new technique based on the properties of continued fractions to include Gaussian or other types of broadening has been introduced. This procedure has been applied to the study of the Jahn-Teller effect in the absorption band shape for the 2s-2p electron transition in Ag:Ar. The relevant electron-phonon interaction considered is linear; the phonon symmetries taken into account are or , and spin-orbit coupling in the p state is included. The theoretical line shape exhibits three different absorption bands, in agreement with previous theoretical calculations and experimental results.
Keywords
This publication has 19 references indexed in Scilit:
- Treatment of the relaxedFcenter in KCl with the recursion methodPhysical Review B, 1985
- Optical band shapes in systems with strong Jahn-Teller couplingJournal of Physics C: Solid State Physics, 1985
- Ham factors and energy levels in multimode Jahn-Teller systemsJournal of Physics C: Solid State Physics, 1983
- The energy-level structure of a Jahn-Teller system strongly coupled to many modes of vibrationJournal of Physics C: Solid State Physics, 1983
- The slow approach to a semi-classical absorption band-shape in certain Jahn-Teller systemsSolid State Communications, 1980
- Recursion method for the extended impurity problemJournal of Physics C: Solid State Physics, 1980
- The calculation of absorption band shapes in dynamic Jahn-Teller systems by the use of the Lanczos algorithmJournal of Physics C: Solid State Physics, 1980
- Electronic structure based on the local atomic environment for tight-binding bands. IIJournal of Physics C: Solid State Physics, 1975
- Density of states from moments. Application to the impurity bandJournal of Physics C: Solid State Physics, 1973
- Electronic structure based on the local atomic environment for tight-binding bandsJournal of Physics C: Solid State Physics, 1972