Solution growth of Indium-Doped silicon
- 1 September 1979
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 8 (5) , 581-602
- https://doi.org/10.1007/bf02657080
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Infrared spectra of new acceptor levels in indium- or aluminum-doped siliconApplied Physics Letters, 1978
- Thermomigration of molten Ga in Si and GaAsJournal of Applied Physics, 1977
- A new acceptor level in indium-doped siliconApplied Physics Letters, 1977
- Resistivity and deep impurity levels in silicon at 300 KIEEE Transactions on Electron Devices, 1977
- Abstracts of the 1975 electronic materials conferenceJournal of Electronic Materials, 1975
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Self-diffusion in liquid metalsAdvances in Physics, 1967
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Germanium and Silicon Liquidus CurvesBell System Technical Journal, 1960
- Variation of the distribution coefficient and solid solubility with temperatureJournal of Physics and Chemistry of Solids, 1957