Optical detection of surface states in semiconductors
- 1 June 1977
- journal article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 39 (2) , 739-747
- https://doi.org/10.1007/bf02725819
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The Si(2 × 1) surface: A theory of its spectroscopyPhysical Review B, 1975
- Model band structure of reconstructed (111) 2 × 1 surface of siliconSolid State Communications, 1975
- Energy Bands of Reconstructed Surface States of Cleaved SiPhysical Review Letters, 1975
- Optical absorption of surface states at Si(111) 7 × 7Surface Science, 1975
- Photoemission and energy loss spectroscopy on semiconductor surfacesSurface Science, 1975
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972
- Determination of Surface States at Clean, Cleaved Silicon Surfaces from PhotoconductivityPhysical Review Letters, 1971
- Optical Detection of Surface States on Cleaved (111) Surfaces of GePhysical Review Letters, 1968
- Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of SiliconPhysical Review B, 1968