Carrier concentration of Hg1−xCdxTe
- 1 February 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (2) , 958-960
- https://doi.org/10.1063/1.1663350
Abstract
A comparison between commonly used expressions for the electron density in the nonparabolic conduction band of Hg1−xCdxTe is made. Calculations are carried out for compositions in the range 0.16≤x≤0.8 and a temperature of 80°K. The effect of the spin‐orbit splitting Δ on electron density is examined.This publication has 4 references indexed in Scilit:
- Electroreflectance Study of CdxHg1-xTeJournal of the Physics Society Japan, 1973
- Intrinsic Carrier Concentration of Hg1−xCdxTe as a Function of x and T Using k·p CalculationsJournal of Applied Physics, 1970
- Band Structure of HgSe and HgSe–HgTe AlloysJournal of Applied Physics, 1961
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957