Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 34-40
- https://doi.org/10.1016/0022-0248(88)90502-7
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Influence of alkyl substituents of Oms and operating pressure on the quality of InxGa1−xAs/InP heterostructures grown by OMVPEJournal of Crystal Growth, 1986
- OMVPE growth of InP and Ga0.47ln0.53as using ethyldimethylindiumJournal of Electronic Materials, 1986