High-speed Si hetero-bipolar transistor with a SiC wide-gap emitter and an ultrathin heavily doped photoepitaxially grown base
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The authors describe the AC performance of a Si-heterojunction bipolar transistor using a SiC wide-gap emitter with a photoepitaxially grown heavily doped ultrathin base (SiC-EBT). A 30-GHz cutoff frequency and low base resistance were achieved, while retaining an acceptable current gain and preventing tunneling current. The DC characteristics of the SiC-EBT were good enough to use in high-performance LSIs.<>Keywords
This publication has 2 references indexed in Scilit:
- A 11.7 GHz 1/8-divider using 43 GHz Si high speed bipolar transistor with photoepitaxially grown ultra-thin basePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial baseIEEE Transactions on Electron Devices, 1990