A perturbation study of the low lying SiO eletronic states
- 15 January 1977
- journal article
- letter
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 66 (2) , 868-869
- https://doi.org/10.1063/1.433922
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- The chemiluminescent flame spectrum of SiOJournal of Molecular Spectroscopy, 1976
- The a3Σ+ → X1Σ+ and b3Π → X1Σ+ band systems of SiO and the a3Σ+ → X1Σ+ band system of GeO observed in chemiluminescenceThe Journal of Chemical Physics, 1975
- The Emission Spectrum of SiO: The A-X System in the 2 100-2 300 Å RegionPhysica Scripta, 1975
- The labeling of parity doublet levels in linear moleculesJournal of Molecular Spectroscopy, 1975
- The identification of a new band system associated with gaseous silicon monoxideJournal of Physics B: Atomic and Molecular Physics, 1975
- A numerical method for the simultaneous determination of term values and molecular constantsJournal of Molecular Spectroscopy, 1974
- Fine structure and perturbation analysis of the a3II state of COJournal of Molecular Spectroscopy, 1972
- Potential Curves for the Valence-Excited States of Silicon Monoxide. A Theoretical StudyThe Journal of Chemical Physics, 1972
- A 3Σ–3Π transition of the SiO moleculeCanadian Journal of Physics, 1970
- A new spectrum associated with diatomic carbonCanadian Journal of Physics, 1968