23 GHz bandwidth monolithic photoreceivercompatible with InP/InGaAs double-heterojunctionbipolar transistor fabrication process
- 24 November 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (24) , 2064-2065
- https://doi.org/10.1049/el:19941405
Abstract
A 23 GHz bandwidth is achieved with a pin/DHBT photoreceiver in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. This is the widest bandwidth yet reported for monolithic photoreceivers.Keywords
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