High speed SiGe heterobipolar transistors
- 2 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 207-214
- https://doi.org/10.1016/0022-0248(95)00387-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986