FREQUENCY TUNING OF GaAs LASER DIODE BY UNIAXIAL STRESS
- 15 November 1963
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 3 (10) , 171-172
- https://doi.org/10.1063/1.1753836
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Effect of Pressure on the Spontaneous and Stimulated Emission from GaAsPhysical Review B, 1963
- Cl nmr in Antiferromagnetic Cu·OPhysical Review Letters, 1963
- Evidence for the Role of Donor states in GaAs ElectroluminescencePhysical Review Letters, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Band Structure of the Intermetallic Semiconductors from Pressure ExperimentsJournal of Applied Physics, 1961
- Deformation Potential in Germanium from Optical Absorption Lines for Exciton FormationPhysical Review Letters, 1959