Physical characterization of low defect SIMOX materials
- 13 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 53, 70-71
- https://doi.org/10.1109/soi.1989.69770
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Low defect, high quality SIMOX material for bipolar device applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Nondestructive analysis of silicon-on-insulator wafersApplied Physics Letters, 1987
- Nucleation and growth of oxide precipitates in silicon implanted with oxygenThin Solid Films, 1986
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985