Quantum dot infrared photodetectors
- 4 March 2003
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 17, 631-633
- https://doi.org/10.1016/s1386-9477(02)00913-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 KApplied Physics Letters, 2001
- Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dotsApplied Physics Letters, 2001
- Quantum dot infrared photodetectorsApplied Physics Letters, 2001
- Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dotsApplied Physics Letters, 2000
- Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dotsApplied Physics Letters, 1999
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum DotsJapanese Journal of Applied Physics, 1999
- Characteristics of InGaAs quantum dot infrared photodetectorsApplied Physics Letters, 1998
- Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectorsApplied Physics Letters, 1998
- Far-infrared photoconductivity in self-organized InAs quantum dotsApplied Physics Letters, 1998
- Mid-infrared photoconductivity in InAs quantum dotsApplied Physics Letters, 1997