On the field-effect transistor characteristics
- 1 March 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 15 (3) , 181-182
- https://doi.org/10.1109/T-ED.1968.16157
Abstract
A theoretical analysis demonstrates that the relationship between IDand VDSfor one value of VGSis sufficient to completely describe the device behavior for any channel impurity profile. A simple graphical procedure is given to generate a complete set of characteristics from the results at one value of VGS. Measurements on ann-channel FET are given to support the theoretical conclusion and to demonstrate the graphical technique.Keywords
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