Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2 Layers by Very High Dose Oxygen-Ion Implantation
- 1 May 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (5)
- https://doi.org/10.1143/jjap.19.1005
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978