Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy
- 1 November 1995
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 196-201, 1165-1170
- https://doi.org/10.4028/www.scientific.net/msf.196-201.1165
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: