Control of the metal-semiconductor phase transition in a vanadium dioxide film with the aid of a fast-acting thermoelectric cooler. III
- 1 February 1998
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics
- Vol. 43 (2) , 235-240
- https://doi.org/10.1134/1.1258973
Abstract
The pulsed-cooling dynamics of fast-acting thermoelectric coolers is analyzed. Good agreement is obtained between the theory and the experimental results on information erasure with an interference vanadium dioxide structure in the single-pulse and repetitive-pulse modes. It is shown that the actually achievable overwrite frequency with thermoelectric erasure of information is about 30 Hz, and a fast-acting thermoelectric cooler is capable of providing a temperature difference of at least 10 °C between the cold and hot junctions under such conditions.Keywords
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