Hydrogen Passivation of Oxygen Donors in Si
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated siliconApplied Physics Letters, 1985
- Atomic deuterium passivation of boron acceptor levels in silicon crystalsApplied Physics Letters, 1985
- Oxygen-related thermal donors in silicon: A new structural and kinetic modelJournal of Applied Physics, 1984
- Symmetry and electronic properties of the oxygen thermal donor in pulled siliconApplied Physics Letters, 1984
- Bulk acceptor compensation produced in p-type silicon at near-ambient temperatures by a H2O plasmaApplied Physics Letters, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Hydrogen passivation of gold-related deep levels in siliconPhysical Review B, 1982
- Hydrogen Concentration and Distribution in High-Purity Germanium CrystalsIEEE Transactions on Nuclear Science, 1982
- Oxygen-related donor states in siliconApplied Physics Letters, 1981
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958