Difference in Electroluminescent ZnS:Tb, F Thin Films Prepared by Electron-Beam Evaporation and RF Magnetron Sputtering

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Abstract
To clarify the difference in ZnS:Tb,F films fabricated by electron-beam evaporation (EB) and by rf magnetron sputtering (SP), the doping condition of Tb and F ions was investigated by electron probe micro analysis and secondary ion mass spectroscopy. The F/Tb atomic ratio of 3 and EL spectra for EB films are found to be hardly affected by annealing. As the model for luminescent centers, it is proposed that the Tb and F ions are substituted for Zn and three S ion sites, respectively, with two Zn vacancies for satisfying charge compensation. For the SP films, interstitial F ions are released from ZnS film and Tb-F complex centers are formed by annealing.