Superior low-noise GaAs MESFET's with graded channel grown by MBE
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (9) , 1393-1395
- https://doi.org/10.1109/t-ed.1986.22679
Abstract
GaAs MESFET's with superior microwave performance were fabricated with uniform and nonuniform doping profiles grown by molecular-beam epitaxy (MBE). At 8 GHz the devices with graded doping exhibited about 1 dB higher gain at the minimum noise figure point compared to flat doping profile devices. The noise figure of 1.38 dB with an associated gain of 8.6 dB at 8 GHz was obtained for the best device with a graded profile.Keywords
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