A metal-oxide-semiconductor varactor
- 1 April 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (4) , 164-166
- https://doi.org/10.1109/55.753754
Abstract
CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance. A prototype metal-oxide-semiconductor (MOS) variable capacitor of 3.1 pF nominal value has been realized in a 0.35-μm standard CMOS process. A factor two capacitance change has been achieved for a 2-V variation of the controlling voltage. The varactor Q ranges from 17 to 35, at 1.8 GHz.Keywords
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