Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system
- 1 June 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (11) , 1092-1094
- https://doi.org/10.1063/1.95772
Abstract
Thin films of Mo and W were grown on top of (100) GaAs in a molecular beam epitaxy system. Mo grew epitaxially between 200 and 450 °C with its (111) plane parallel to (100) GaAs plane. W grew as a random polycrystalline deposit. For both metals, interaction with the GaAs occurred during growth at 500 °C. Schottky barrier heights determined by current and capacitance measurements show that the electrical properties of the metal-GaAs interface do not strongly depend on the growth temperature and the microstructure of the films.Keywords
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