Operational silicon bipolar inversion-channel field-effect transistor (BICFET)
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (9) , 513-515
- https://doi.org/10.1109/EDL.1986.26456
Abstract
A new transistor structure, the bipolar inversion-channel field-effect transistor (BICFET), has been recently proposed. Potential advantages include a very high frequency response and ability to be scaled to small dimensions. The first operational devices of this type are described and are shown to possess characteristics of the general form predicted.Keywords
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