Effect of multiplication layer width on breakdown voltage in InP/InGaAs avalanche photodiode
- 18 December 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (25) , 3789-3791
- https://doi.org/10.1063/1.115384
Abstract
Breakdown voltages of InP/InGaAs avalanche photodiodes have been analyzed with structure parameters, such as multiplication layer width (MLW) and absorption layer thickness. It is shown that there exists a critical MLW, w0, where the breakdown voltage is the lowest. As MLW increases, the breakdown voltage increases slowly in the region of MLW≥w0 while the breakdown voltage decreases in the region of MLW≤w0. It is also revealed that w0 is a function of absorption layer thickness. The measured breakdown voltages having MLWs of 0.15–0.4 μm were reported and compared to the calculated ones, which agreed very well with each other.Keywords
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