Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- 1 November 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (11B) , L1309
- https://doi.org/10.1143/jjap.38.l1309
Abstract
The role of indium on the growth surfaces of GaNAs was studied with metalorganic molecular-beam epitaxy. GaNAs was grown with and without triethylindium (TEIn) supply. High-resolution X-ray diffraction measurements reveal an increase in nitrogen incorporation in GaNAs with TEIn supply and negligible indium incorporation. This indicates that indium plays the role of a surfactant on the growth surface and enhances nitrogen incorporation in GaNAs.Keywords
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