Radiotracer Studies of Ion Implanted Profile Build-Up in Silicon Substrates

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Abstract
Injection of radiotracer markers at varying fractions of the total implanted dose has provided information on dose dependence of “channeling” in silicon substrates. The implanted profile (total) variation with substrate orientation agrees with that previously reported for electrically active impurities which was determined by junction delineation. Comparison of marker profiles shows a reduction of about 1/10 in impurity ion concentration at three times the depth of the peak of the distribution and about 1/20 the concentration at four times the depth of the peak of the distribution after have impinged on the substrate. A greater fall‐off in channeled ions is found when the dose was increased to .

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