Electromigration in conductor stripes under pulsed dc powering
- 15 October 1972
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (8) , 397-398
- https://doi.org/10.1063/1.1654428
Abstract
Thin Ti–Au films on sapphire were powered using pulsed dc. The incidence of electromigration damage is a complex function of pulse duration and repetition rate. For a given total ``exposure'' (fixed current density for a fixed total on-time) the damage may be reduced or eliminated by using duty cycles less than 100%.Keywords
This publication has 4 references indexed in Scilit:
- Void Formation and Growth During Electromigration in Thin FilmsJournal of Applied Physics, 1971
- Electromigration and failure in electronics: An introductionProceedings of the IEEE, 1971
- Time-dependent void nucleation during electromigrationMaterials Science and Engineering, 1971
- Annealing kinetics of voids and the Self‐diffusion coefficient in aluminumPhysica Status Solidi (b), 1968