A proposed method for rapid determination of doping profiles in semiconductor layers

1 January 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (11) , 2095-2096
https://doi.org/10.1109/PROC.1968.6815

Abstract

A procedure is proposed for determining the impurity atom profile on one side of a p-n junction from harmonic generation measurements. The analysis indicates that a series of determinations can be made without detailed point-by-point calculations. The ultimate resolution of the method is discussed.

Keywords

DOPING PROFILES
ZINC OXIDE
FETS
VOLTAGE
CONDUCTIVITY
TRANSCONDUCTANCE
TEMPERATURE DISTRIBUTION
CRYSTALS
CLEANING
INSULATION