A re-examination of the physics of multiplication-induced breakdown in MOSFETs

Publisher Website

7 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 87-90
https://doi.org/10.1109/iedm.1989.74234

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects
IEEE Electron Device Letters, 1988
A circuit simulation model for bipolar-induced breakdown in MOSFET
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988