Light scattering from laser annealed ion implanted semiconductors

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Abstract
Light scattering is shown to be a powerful tool for the investigation of laser annealed ion implanted semiconductors. The results reported here concern boron implanted in silicon which shows up as localized mode where in substitutional position and boron‐phosphorous pairs giving also localized modes. The characteristics of the amorphous layer obtained after ion inplantation are also investigated by Raman spectroscopy and detailed results on the amorphous crystalline transition achieved by laser annealing are presented.