Modelling of short-channel m.o.s. transistors
- 14 May 1970
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 6 (10) , 313-315
- https://doi.org/10.1049/el:19700220
Abstract
The effects of both the bulk charge due to the drain depletion region and the saturation of carrier velocity on the current/voltage characteristics of short-channel m.o.s.t.s are considered. Theoretical calculations based on both 2-dimensional and 1-dimensional models show close agreement with experimental measurements.Keywords
This publication has 0 references indexed in Scilit: