Microwave plasma stream transport system for low temperature plasma oxidation

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Abstract
A compact microwave plasma stream transport system is newly developed for low temperature plasma oxidation studies. The principle of the system is to irradiate magnetically confined oxygen plasma onto the sample to be oxidized in a clean vacuum environment while irradiating it with a pulsed-CO2 laser beam during plasma oxidation to enhance the reaction. Optical diagnosis of the microwave generated oxygen plasma shows that highly excited oxygen atoms and molecular ions are present in the plasma. The oxygen plasma is transported to the silicon substrate without serious loss and interaction with the vacuum vessel. 1 h irradiation of a silicon surface at 700 ° C substrate temperature produces a 23 nm thick, high quality SiO2 layer formation. Electrical properties of the plasma oxidized SiO2–Si interface were examined by making MOS diodes. Interface state densities of the MOS capacitors for the plasma oxidized SiO2 exhibited a value of 7×1010 cm−2 eV−1. This value is very close to the one for the thermally oxidized SiO2, and two orders smaller than that reported in conventional biased plasma anodization.

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