An AES Evaluation of Cleaning and Etching Methods for InSb

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Abstract
The inverse sensitivity factors required for quantitative Auger electron spectroscopy were determined. This facilitated semiquantitative Auger analysis of (111) sample surfaces after treating them with various etches and cleaning procedures currently used in the device fabrication technology. Estimations of the thicknesses of the surface oxide layers remaining after chemical cleaning were also made by comparing their Ar ion etch times with those of anodically grown oxides of known thicknesses. It was found that, depending on the etch used, the carbon surface coverage varied between 0 and 70%, the oxide thicknesses varied between 5 and 120Å, and the In/Sb surface ratio ranged from 0.6 to 3.0.

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