Diffusion of Impurities in the Semiconductor Melt II. Dynamical Analysis of Impurity Redistribution in the Melting Process

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Abstract
An analysis is given on the redistribution of solute in the semiconductor melt during the melting process of a crystal which is in contact with the melt. In contrast to a previous work where an assumption was made concerning the impurity distribution in the melt just when the melting process was finished, the existence of the solute diffusion layer directly under the crystal is assumed throughout the whole process. After the melting process, impurities in the melt are made to diffuse into the crystal. Analytical formula for impurity distribution in the crystal is given in a convenient form for the direct comparison with experiments.

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