Growth of polycrystalline silicon films on glass by high-temperature chemical vapour deposition

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Abstract
Covering glass substrates with polycrystalline Si films for electronic devices such as solar cells still presents a great challenge. In a two-step process, we first coat a novel high-temperature resistant glass substrate with a thin film of amorphous Si, which is then solid-phase crystallized at . In the second step, atmospheric pressure chemical vapour deposition at serves to deposit a several micron thick light-absorbing film. The minority carrier diffusion length in our films correlates with the area weighted grain size determined by transmission electron microscopy. We obtain a hole mobility of after hydrogen passivation and an electron diffusion length of .