ALE-CdS/CdTe-PV-CELLS
- 1 January 1992
- journal article
- research article
- Published by Taylor & Francis in International Journal of Sustainable Energy
- Vol. 12 (1-4) , 137-142
- https://doi.org/10.1080/01425919208909757
Abstract
Atomic Layer Epitaxy, ALE, has been applied to grow CdS/CdTe-thin film solar cells. ALE offers the possibility to grow both CdS and CdTe in a single process and to taylor the interface of CdS and CdTe. The thickness of CdS was varied and the optimum was found to be in the range of 50-100 nm with good heterojunction performance and CdTe-crystallinity leading to excellent PV-properties. The structures with thinner CdS layers suffered low open circuit voltage but on the other hand with thicker CdS the short circuit current was limited by the absorption of CdS.Keywords
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