Si-Ge STRAINED LAYER SUPERLATTICES
- 1 November 1987
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 48 (C5) , C5-321
- https://doi.org/10.1051/jphyscol:1987569
Abstract
We report on growth and properties of Si/SiGe strained layer superlattices. Critical thicknesses and relaxation processes in single layers are studied with Raman spectroscopy, LEED, and TEM. Phonon Raman scattering is used to determine built-in strain and period length of superlattices. Transport measurements show mobility enhancement in selectively doped samples. The ordering of electronic bands due to strain yields to two-dimensional electron gases in SiKeywords
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