MeV backscattering analysis of annealing behaviors of ion-implanted arsenic in silicon
- 15 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1-3) , 607-611
- https://doi.org/10.1016/0167-5087(83)91052-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Pulsed electron beam annealing of arsenic-implanted siliconJournal of Applied Physics, 1982
- Arsenic implantation into polycrystalline silicon and diffusion to silicon substrateJournal of Applied Physics, 1977
- The Diffusion of Ion‐Implanted Arsenic in SiliconJournal of the Electrochemical Society, 1975