50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 33 (9) , 1336-1341
- https://doi.org/10.1109/4.711332
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low dc power high-gain bandwidth product InAlAs/InGaAs-InP HBT direct-coupled amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communicationIEEE Journal of Solid-State Circuits, 1996
- High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contactsIEEE Transactions on Electron Devices, 1995
- Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layerIEEE Electron Device Letters, 1990