Thermally induced metastable defect studies on hydrogenated amorphous silicon films with different hydrogen contents
- 1 October 1995
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 190 (1-2) , 163-168
- https://doi.org/10.1016/0022-3093(95)00270-7
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- On the role of hydrogen in metastable defect equilibration in undoped hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1993
- Defect equilibration and stabilization in low-spin-densitya-Si:HPhysical Review B, 1992
- Metastable effects induced by thermal quenching in undoped amorphous siliconPhilosophical Magazine Part B, 1991
- Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsPhysical Review B, 1990
- Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogenPhysical Review B, 1990
- Defect equilibria in undopeda-Si:HPhysical Review B, 1989
- Equilibrium temperature and related defects in intrinsic glow discharge amorphous siliconApplied Physics Letters, 1987
- Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous SiliconPhysical Review Letters, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Electronic correlations and transient effects in disordered systemsSolar Energy Materials, 1982